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U3D 数据表(PDF) 2 Page - Vishay Siliconix |
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U3D 数据表(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page ![]() www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 89066 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 13-Oct-09 U3B, U3C, U3D Vishay General Semiconductor New Product Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms Note (1) Free air, mounted on recommended copper pad area. Thermal resistance RθJA - junction to ambient, RθJM - junction to mount RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage IF = 3.0 A TA = 25 °C VF (1) 0.85 0.90 V TA = 100 °C 0.74 0.83 Reverse current Rated VR TA = 25 °C IR (2) -10 μA TA = 100 °C 250 500 Reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A TA = 25 °C trr -20 ns IF = 3.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 0.1 IRM TA = 25 °C 25 30 TA = 100 °C 35 50 Storage charge IF = 3.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 0.1 IRM TA = 25 °C Qrr 915 nC TA = 100 °C 22 35 Typical junction capacitance 4.0 V, 1 MHz CJ 25 - pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL U3B U3C U3D UNIT Typical thermal resistance RθJA (1) 92 °C/W RθJM (1) 10 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE U3D-E3/57T 0.239 57T 850 7" diameter plastic tape and reel U3D-E3/9AT 0.239 9AT 3500 13" diameter plastic tape and reel 80 3.0 TM - Mount Temperature (°C) 0 1.0 90 120 150 2.0 100 110 140 130 0 Average Forward Current (A) 0 1.5 0.5 2.0 3.5 2.5 2.0 0.5 1.0 1.5 3.0 3.0 1.0 2.5 D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 0.8 D = 1.0 D = t p/T t p T |
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