BC847C datasheet(3/8 Pages) SIEMENS

3 / 8 page

BC 846 ... BC 850

Semiconductor Group

Electrical Characteristics

1)Pulse test: t

≤ 300 µs, D = 2 %.

Collector-emitter breakdown voltage

IC = 10 mA

BC 846

BC 847, BC 850

BC 848, BC 849

V(BR)CE0

–

µA

Collector cutoff current

VCB = 30 V

VCB = 30 V, TA = 150 ˚C

ICB0

–

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

IC = 10

µA

BC 846

BC 847, BC 850

BC 848, BC 849

V(BR)CB0

–

Emitter-base breakdown voltage

IE = 1

µA

BC 846, BC 847

BC 848, BC 849, BC 850

V(BR)EB0

–

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

–

200

250

600

–

DC current gain

IC = 10

µA, VCE = 5 V

BC 846 A, BC 847 A, BC 848 A

BC 846 B … BC 850 B

BC 847 C, BC 848 C, BC 849 C, BC 850 C

IC = 2 mA, VCE = 5 V

BC 846 A, BC 847 A, BC 848 A

BC 846 B … BC 850 B

BC 847 C, BC 848 C, BC 849 C, BC 850 C

hFE

–

110

200

420

140

250

480

180

290

520

–

220

450

800

Base-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

–

700

900

–

Collector-emitter breakdown voltage

IC = 10

µA, VBE = 0

BC 846

BC 847, BC 850

BC 848, BC 849

V(BR)CES

–

Base-emitter voltage

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(on)

580

–

660

–

700

770

at TA = 25 ˚C, unless otherwise specified.

BC847C 数据表(PDF) 3 Page - Siemens Semiconductor Group

BC847C 数据表(HTML) 3 Page - Siemens Semiconductor Group

Html Pages

1 2 3 4 5 6 7 8

数据表下载

链接网址

BC847C 数据表(PDF) 3 Page - Siemens Semiconductor Group

BC847C 数据表(HTML) 3 Page - Siemens Semiconductor Group

Html Pages

1 2 3 4 5 6 7 8

数据表 下载

链接网址

数据表下载