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BUW48 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUW48 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BUW48 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 7 V VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH 60 V VCEsat-1 Collector-emitter saturation voltage IC=20A; IB=2A 0.6 V VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=1.5A 0.5 V VBEsat Base-emitter saturation voltage IC=40A; IB=4A 2.1 V ICEX Collector cut-off current VCE=rated ;VBE=-1.5V TC=125℃ 1 3 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA fT Transition frequency VCE=15V,f=15MHz;IC=1A 8 Switching times : ton Turn-on time 1.2 1.5 μs ts Storage time 0.6 1.1 μs tf Fall time IC=40A; IB1=- IB2=4A VCC=60V 0.17 0.25 μs THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-case Thermal resistance junction case 1 ℃/W |
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