BCR521 datasheet(2/4 Pages) SIEMENS

部件名	BCR521

功能描述	NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PDF	4 Pages

Scroll/Zoom	100%

制造商	SIEMENS [Siemens Semiconductor Group]

网页	http://www.siemens.com/

标志

2 / 4 page

Semiconductor Group

Nov-27-1996

BCR 521

Electrical Characteristics at

TA=25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 100 µA, IB = 0

V(BR)CEO

Collector-base breakdown voltage

IC = 10 µA, IB = 0

V(BR)CBO

Collector cutoff current

VCB = 40 V, IE = 0

ICBO

100

Emitter cutoff current

VEB = 5 V, IC = 0

IEBO

3.75

DC current gain

IC = 50 mA, VCE = 5 V

hFE

Collector-emitter saturation voltage 1)

IC = 50 mA, IB = 2.5 mA

VCEsat

0.3

Input off voltage

IC = 100 µA, VCE = 5 V

Vi(off)

0.6

1.5

Input on Voltage

IC = 10 mA, VCE = 0.3 V

Vi(on)

1.8

Input resistor

0.7

1.3

Ω

Resistor ratio

R1/R2

0.9

1.1

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 100 MHz

100

MHz

1) Pulse test: t < 300

µs; D < 2%

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