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BFP280 数据表(PDF) 1 Page - Siemens Semiconductor Group |
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BFP280 数据表(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 7 page ![]() Semiconductor Group 1 Dec-11-1996 BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 280 REs Q62702-F1378 1 = C 2 = E 3 = B 4 = E SOT-143 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 8 V Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 2 Collector current IC 10 mA Base current IB 1.2 Total power dissipation TS ≤ 108 °C Ptot 80 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) RthJS ≤ 520 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. |
类似零件编号 - BFP280 |
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类似说明 - BFP280 |
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