BFP450 datasheet(2/8 Pages) SIEMENS

2 / 8 page

BFP 450

Semiconductor Group

Sep-09-1998

Electrical Characteristics at

TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC characteristics

6.5

4.5

V(BR)CEO

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

600

Collector-base cutoff current

VCB = 5 V, IE = 0

ICBO

100

µA

Emitter-base cutoff current

VEB = 1.5 V, IC = 0

IEBO

DC current gain

IC = 50 mA, VCE = 4 V

hFE

150

AC characteristics

Transition frequency

IC = 90 mA, VCE = 3 V, f = 1 GHz

IC = 90 mA, VCE = 3 V, f = 2 GHz

GHz

Collector-base capacitance

VCB = 2 V, f = 1 MHz

Ccb

0.48

0.75

Collector-emitter capacitance

VCE = 2 V, f = 1 MHz

Cce

1.33

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

1.75

Noise figure

IC = 10 mA, VCE = 2 V, ZS = ZSopt ,

f = 1.8 GHz

1.25

1.6

Power gain 2)

IC = 50 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt ,

f = 1.8 GHz

Gma

Insertion power gain

IC = 50 mA, VCE = 2 V, f = 1.8 GHz,

ZS = ZL = 50Ω

S21|2

Third order intersept point

IC = 50 mA, VCE = 3 V, ZS=ZSopt , ZL=ZLopt ,

f = 1.8 GHz

IP3

dBm

1dB Compression point

IC = 50 mA, VCE = 3 V, f = 1.8 GHz,

ZS=ZSopt , ZL=ZLopt

P-1dB

Gma = |S21 / S12| (k-(k2-1)1/2)

Semiconductor Group

1998-11-01

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