KTA1663 datasheet(1/2 Pages) HTSEMI

部件名	KTA1663

功能描述	TRANSISTOR (PNP)

PDF	2 Pages

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制造商	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

网页	http://www.htsemi.com

标志

1 / 2 page

FEATURES

High current applications

Complementary to KTC4375

MAXIMUM RATINGS

(TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-30

V

VCEO

Collector-Emitter Voltage

-30

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-1.5

A

PC

Collector Power Dissipation

500

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-1mA, IE=0

-30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10mA, IB=0

-30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-1mA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-30V, IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V, IC=0

-0.1

μA

DC current gain

hFE

VCE=-2V, IC=-0.5A

100

320

Collector-emitter saturation voltage

VCE(sat)

IC=-1.5A, IB=-30mA

-2

V

Base-emitter voltage

VBE

VCE=-2V, IC=-0.5A

-1

V

Transition frequency

fT

VCE=-2V, IC=-500mA

120

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0,f=1MHz

50

MHz

CLASSIFICATION OF hFE

Rank

O

Y

Range

100-200

160-320

SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

TRANSISTOR (PNP)

KTA1663

１　

Ｄａｔｅ：２０１１／０５

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