BFS482 datasheet(3/6 Pages) SIEMENS

部件名	BFS482

功能描述	NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.)

PDF	6 Pages

Scroll/Zoom	100%

制造商	SIEMENS [Siemens Semiconductor Group]

网页	http://www.siemens.com/

标志

3 / 6 page

Semiconductor Group

Dec-16-1996

BFS 482

Electrical Characteristics at

TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics

Transition frequency

IC = 15 mA, VCE = 8 V, f = 500 MHz

GHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

0.3

0.45

Collector-emitter capacitance

VCE = 10 V, f = 1 MHz

Cce

0.12

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

0.65

Noise figure

IC = 3 mA, VCE = 8 V, ZS = ZSopt

f = 900 MHz

f = 1.8 MHz

1.9

1.2

Power gain

IC = 10 mA, VCE = 8 V, f = 900 MHz

ZS = ZSopt, ZL = ZLopt

Gms

19.5

Power gain

IC = 10 mA, VCE = 8 V, f = 1.8 GHz

ZS = ZSopt, ZL = ZLopt

Gma

Transducer gain

IC = 10 mA, VCE = 8 V, ZS =ZL= 50 Ω

f = 900 MHz

f = 1.8 GHz

S21e|2

15.5

Gms = |S21/S12|

Gma = |S21/S12| (k-(k2-1)1/2)

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