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2SC2235TM 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC2235TM 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() 2SC2235TM 0.8A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 17-Aug-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 3 Base 1 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Complementary to 2SA965 CLASSIFICATION OF hFE Product-Rank 2SC2235-O 2SC2235-Y Range 80-160 120-240 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 120 V Collector to Emitter Voltage VCEO 120 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 0.8 A Collector Power Dissipation PC 0.9 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 120 - - V IC=1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 120 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=1mA, IC=0 Collector Cut-Off Current ICBO - - 0.1 µ A VCB=120V, IE=0 Emitter Cut-Off Current IEBO - - 0.1 µ A VEB=5V, IC=0 DC Current Gain hFE 80 - 240 VCE=5V, IC=100mA Collector to Emitter Saturation Voltage VCE(sat) - - 1 V IC=500mA, IB=50mA Base to Emitter Saturation Voltage VBE - - 1 V VCE=5V, IC=0.5A Transition Frequency fT - 120 - MHz VCE=5V, IC=100mA Collector Output Capacitance Cob - - 30 pF VCE=10V, IE=0, f=1MHz TO-92MOD 1 1 1 1 Emitter 2 2 2 2 Collector 3 3 3 3 Base REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.50 6.50 H 1.70 2.05 B 8.00 9.00 J 2.70 3.20 C 12.70 14.50 K 0.85 1.15 D 4.50 5.30 L 1.60 Max E 0.35 0.65 M 0.00 0.40 F 0.30 0.51 N 4.00 Min G 1.50 TYP. A C E K F D B G H J L M N |
类似零件编号 - 2SC2235TM |
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类似说明 - 2SC2235TM |
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