2SD596 datasheet(1/3 Pages) SECOS

部件名	2SD596

功能描述	0.7A , 30V NPN Plastic Encapsulated Transistor

PDF	3 Pages

Scroll/Zoom	100%

制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

标志

1 / 3 page

2SD596

0.7A , 30V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

15-Jul-2011 Rev. A

Page 1 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

1

Base

2

Emitter

Collector

3

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

High DC Current gain

Complementary to 2SB624

MARKING

DV4

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-23

3K

7 inch

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCBO

30

V

Collector to Emitter Voltage

VCEO

25

V

Emitter to Base Voltage

VEBO

5

V

Collector Current - Continuous

IC

700

mA

Collector Power Dissipation

PC

200

mW

Junction, Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Collector to Base Breakdown Voltage

V(BR)CBO

30

-

V

IC=100µA, IE=0

Collector to Emitter Breakdown Voltage

V(BR)CEO

25

-

V

IC=1mA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

5

-

V

IE=100µA, IC=0

Collector Cut-Off Current

ICBO

-

0.1

µ

A

VCB=30V, IE=0

Emitter Cut-Off Current

IEBO

-

0.1

µ

A

VEB=5V, IC=0

DC Current Gain

1

hFE (1)

200

-

320

VCE=1V, IC=100mA

hFE (2)

50

-

VCE=1V, IC=700mA

Collector to Emitter Saturation Voltage

1

VCE(sat)

-

0.6

V

IC=700mA, IB=70mA

Base to Emitter Saturation Voltage

1

VBE

0.6

-

0.7

V

VCE=6V, IC=10mA

Transition Frequency

fT

170

-

MHz

VCE=6V, IC=10mA

Collector output capacitance

Cob

-

12

-

pF

VCB=6V, IE=0, f=10MHZ

Note:

1.

Pulse width≦350µs, Duty Cycle≦2%.

SOT-23

Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

2.80

3.04

G

0.09

0.18

B

2.10

2.55

H

0.45

0.60

C

1.20

1.40

J

0.08

0.177

D

0.89

1.15

K

0.6 REF.

E

1.78

2.04

L

0.89

1.02

F

0.30

0.50

类似零件编号 - 2SD596

制造商	部件名	数据表	功能描述
NEC	2SD596	249Kb / 4P	AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
Galaxy Semi-Conductor H...	2SD596	264Kb / 4P	Silicon Epitaxial Planar Transistor Rev.A
Guangdong Kexin Industr...	2SD596	37Kb / 1P	NPN Silicon Epitaxial Transistor
Rectron Semiconductor	2SD596	298Kb / 2P	SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
Shenzhen Jin Yu Semicon...	2SD596	761Kb / 3P	TRANSISTOR (NPN)

More results

类似说明 - 2SD596

制造商	部件名	数据表	功能描述
SeCoS Halbleitertechnol...	2N5172	81Kb / 1P	NPN Plastic Encapsulated Transistor
	2N5832	83Kb / 1P	NPN Plastic Encapsulated Transistor
	2N6517	142Kb / 1P	NPN Plastic Encapsulated Transistor
	2SC1008	83Kb / 1P	NPN Plastic Encapsulated Transistor
	2SC1318A	135Kb / 2P	NPN Plastic Encapsulated Transistor
	2SC1923	83Kb / 1P	NPN Plastic Encapsulated Transistor
	D882S	214Kb / 2P	NPN Plastic Encapsulated Transistor
	2SC5345	704Kb / 2P	0.02A , 30V NPN Plastic Encapsulated Transistor
	2SD1767	77Kb / 1P	0.7A , 80V NPN Plastic Encapsulated Transistor
	KSC2328AL	404Kb / 2P	2A , 30V NPN Plastic Encapsulated Transistor