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BAS116WS 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BAS116WS 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() BAS116WS 0.215A , 85V Surface Mount Small Signal Switching Diode Elektronische Bauelemente 29-Nov-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low leakage current applications. Medium speed switching times. Surface mount package ideally suited for automatic Insertion. APPLICATINS High speed switching application. MARKING PACKAGE INFORMATION ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Peak Repetitive Peak Reverse Voltage VRRM 85 V Working Peak Reverse Voltage VRWM 85 V DC Blocking Voltage VR 85 V RMS Reverse Voltage VR(RMS) 60 V Forward Continuous Current IFM 215 mA Repetitive Peak Forward Current IFRM 500 mA Non-Repetitive Peak Forward Surge Current t=1.0µs IFSM 4 A t=1.0ms 1 t=1.0s 0.5 Power Dissipation PD 200 mW Thermal Resistance Junction to Ambient Air RθJA 500 °C / W Junction, Storage Temperature TJ, TSTG 150, -65~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameters Symbol Min. Typ. Max. Unit Test Conditions Reverse Breakdown Voltage V(BR)R 85 - - V IR=100µA Forward Voltage VF - - 0.9 V IF=1mA - - 1 IF=10mA - - 1.1 IF=50mA - - 1.25 IF=150mA Reverse Leakage Current IR - - 5 nA VR=75V - - 80 VR=75V, TJ=150°C Junction Capacitance CJ - 2 - pF VR=0, f=1.0MHz Reverse Recovery Time TRR - - 3 nS IF=IR=10mA, IRR=0.1xIR Package MPQ Leader Size SOD-323 3K 7 inch Cathode Band G E A J F D H C B 1 2 SOD-323 JV REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.05 REF. E 0.080 0.180 B 0.20 REF. F 1.15 1.45 C 0.80 1.00 G 1.60 1.80 D 0.25 0.40 H 2.30 2.70 |
类似零件编号 - BAS116WS |
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类似说明 - BAS116WS |
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