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DTC143TCA 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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DTC143TCA 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 2 page ![]() Elektronische Bauelemente DTC143TE / DTC143TUA DTC143TCA / DTC143TSA / DTC143TM NPN Digital Transistors (Built-in Resistors) 25-Oct-2011 Rev. B Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO 50 - - V IC=50 µA Collector-emitter breakdown voltage V(BR)CEO 50 - - V IC=1mA Emitter-base breakdown voltage V(BR)EBO 5 - - V IE=50 µA Collector cut-off current ICBO - - 0.5 µA V CB=50V Emitter cut-off current IEBO - - 0.5 µA V EB=4V Collector-emitter saturation voltage VCE(sat) - - 0.3 V IC=5mA, IB=0.25mA DC current transfer ratio hFE 100 - 600 VCE=5V, IC=1mA Input resistance R1 3.29 4.7 6.11 K Transition frequency fT - 250 - MHz VO=10V, IO=5mA, f=100MHz CHARACTERISTIC CURVES |
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