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BGA310 数据表(PDF) 1 Page - Siemens Semiconductor Group |
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BGA310 数据表(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 4 page ![]() BGA 310 Semiconductor Group Sep-04-1998 1 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Ω-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P -1dB at 1.0 GHz • 3 dB-bandwidth: DC to 2.4 GHz VPS05178 2 1 3 4 EHA07312 3 1 2, 4 RF IN RF OUT/Bias GND Circuit Diagram Type Marking Ordering Code Pin Configuration Package BGA 310 BLs Q62702-G0041 1 RFout/bias 2 GND 3 RF input 4 GND SOT-143 Maximum Ratings Parameter Value Symbol Unit Device current ID mA 60 Total power dissipation, TS ≤ 99 °C 250 Ptot mW RF input power dBm 10 PRFin Tj Junction temperature 150 °C Ambient temperature TA -65 ...+150 Storage temperature Tstg -65 ...+150 Thermal Resistance Junction - soldering point 1) RthJS ≤ 205 K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group 1 1998-11-01 |
类似零件编号 - BGA310 |
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类似说明 - BGA310 |
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