MMBD4448HT datasheet(1/2 Pages) SECOS

部件名	MMBD4448HT

功能描述	Plastic-Encapsulated Switching Diode

PDF	2 Pages

Scroll/Zoom	100%

制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

标志

1 / 2 page

MMBD4448HT Series

Plastic-Encapsulated Switching Diode

Elektronische Bauelemente

21-Jul-2011 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.



Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3



REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

1.5

1.7

G

-

0.1

B

1.45

1.75

H

0.55 REF.

C

0.75

0.85

J

0.1

0.2

D

0.7

0.9

K

-

E

0.9

1.1

L

0.5 TYP.

F

0.15

0.25

M

0.25

0.325

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Fast switching speed

For General Purpose Switching Applications

High Conductance

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-523

3K

7 inch

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameters

Symbol

Rating

Unit

Non-Repetitive Peak Reverse Voltage

VRM

100

V

Peak Repetitive Reverse Voltage

VRRM

80

V

Working Peak Reverse Voltage

VRWM

80

V

DC Blocking Voltage

VR

80

V

RMS Reverse Voltage

VR(RMS)

57

V

Forward Continuous Current

IFM

500

mA

Average Rectified Output Current

IO

250

mA

Non-Repetitive Peak Forward Surge

Current

t=1.0µs

IFSM

4.0

A

t=1.0s

1.5

Power Dissipation

PD

150

mW

Thermal Resistance, Junction to Ambient

RθJA

833

°C / W

Storage Temperature

TSTG

-65~150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameters

Symbol

Min.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

VR

80

-

V

IR=2.5µA

Forward Voltage

VF1

0.62

0.72

V

IF=5mA

VF2

-

0.855

V

IF=10mA

VF3

-

1

V

IF=100mA

VF4

-

1.25

V

IF=150mA

Maximum DC Reverse Current at rated

DC blocking voltage

IR1

-

0.1

µA

VR=70V

IR2

25

nA

VR=20V

Capacitance between terminals

CT

3.5

pF

VR=6V, f=1MHz

Maximum Reverse Recovery Time

TRR

-

4

nS

VR=6V, IF=5mA

Product

MMBD4448HT

MMBD4448HTA

MMBD4448HTC

MMBD4448HTS

Marking

A3

A6

A7

AB

Circuit

SOT-523

类似零件编号 - MMBD4448HT

制造商	部件名	数据表	功能描述
Diodes Incorporated	MMBD4448HT	167Kb / 2P	SURFACE MOUNT FAST SWITCHING DIODE DS30263 Rev. 5 - 2
Diodes Incorporated	MMBD4448HT	76Kb / 3P	SURFACE MOUNT FAST SWITCHING DIODE DS30263 Rev. 9 - 2
Weitron Technology	MMBD4448HT	1Mb / 3P	Surface Mount Switching Diodes
Diodes Incorporated	MMBD4448HT	90Kb / 3P	SURFACE MOUNT FAST SWITCHING DIODE Rev. 12 - 2 March 2009
Micro Commercial Compon...	MMBD4448HT	185Kb / 3P	150mW Switching Diodes

More results

类似说明 - MMBD4448HT

制造商	部件名	数据表	功能描述
SeCoS Halbleitertechnol...	BAL99	121Kb / 2P	Plastic-Encapsulated Switching Diode
	MMBD4448F	225Kb / 2P	Plastic-Encapsulated Switching Diode
	SCS181K	123Kb / 2P	Plastic-Encapsulated Switching Diode
	SCS187K	123Kb / 2P	Plastic-Encapsulated Switching Diode
	MMBD4448Z	320Kb / 2P	Plastic-Encapsulated Switching Diode
	SCS21DSTL	201Kb / 2P	Plastic-Encapsulated Switching Diode
	SCS187K	123Kb / 2P	Plastic-Encapsulated Switching Diode
	SCS400J	284Kb / 2P	Plastic-Encapsulated Switching Diode
	SCS914DSTL	138Kb / 2P	Plastic-Encapsulated Switching Diode
	SCS4448DSTL	319Kb / 2P	Plastic-Encapsulated Switching Diode