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SSD02N65 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSD02N65 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page ![]() SSD02N65 2A , 650V , RDS(ON) 8 N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 24-Nov-2011 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E F H K J M B TO-252(D-Pack) 2N65 RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD02N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING PACKAGE INFORMATION Package MPQ Leader Size TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V Continuous Drain Current @VGS=10V 1 TC=25°C ID 2 A TC=100°C 1.3 A Pulsed Drain Current 2 IDM 4 A Total Power Dissipation 4 TC=25°C P D 40 W Linear Derating Factor 0.33 W / °C Single Pulse Avalanche Energy 3 EAS 16 mJ Single Pulse Avalanche Current IAS 3.4 A Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient 1 RθJA 62 °C / W Maximum Thermal Resistance Junction-Case 1 RθJC 3 °C / W 1 Gate 3 Source 2 Drain Date Code REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 6.35 6.80 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.65 E 6.8 7.5 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.25 H 0.64 1.20 |
类似零件编号 - SSD02N65 |
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类似说明 - SSD02N65 |
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