Elektronische Bauelemente

SSF7400

N-Ch Enhancement Mode Power MOSFET

25-Aug-2011 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

30

-

-

V

Gate-Threshold Voltage

0.6

-

1.4

V

Gate-Body Leakage Current

-

-

±100

nA

-

-

1

Drain-Source Leakage Current

-

-

5

μA

-

-

85

-

-

100

Drain-Source On-Resistance

1

-

-

140

mΩ

Forward Transconductance

-

4

-

S

Dynamic

Total Gate Charge

1

-

4.82

-

Gate-Source Charge

-

0.62

-

Gate-Drain (“Miller”) Change

-

1.58

-

nC

Turn-on Delay Time

1

-

2.5

-

Rise Time

-

2.3

-

Turn-off Delay Time

-

22

-

Fall Time

-

3

-

nS

Input Capacitance

-

390

-

Output Capacitance

-

54.4

-

Reverse Transfer Capacitance

-

41

-

pF

f=1.0MHz

Gate Resistance

Rg

-

3

-

Ω

f=1.0MHz

Source-Drain Diode

Continuous Source Current

(Body Diode)

-

-

0.5

A

Diode Forward Voltage

1

-

-

1

V

Reverse Recovery Time

1

-

10

-

ns

Reverse Recovery Charge

-

3.6

-

nC

dI/dt=100A/μs

Notes:

1. Pulse width≦300us, duty cycle≦2%.