Elektronische Bauelemente

SSF7401

-30V , -2A

P-Ch Enhancement Mode MOSFET

18-Oct-2011 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-30

-

-

V

Gate Threshold Voltage

-0.5

-

-1.2

V

Gate Body Leakage Current

-

-

±100

nA

-

-

-1

Zero Gate Voltage Drain

Current

-

-

-10

μA

-

-

120

-

-

150

Drain-Source on-State Resistance

-

-

190

mΩ

Forward Transconductance

-

4

S

Gate Resistance

-

12

-

Ω

f=1.0MHz

Dynamic

Total Gate Charge

2

-

5.06

-

Gate-Source Charge

-

0.72

-

Gate-Drain (‘‘Miller’’)Charge

-

1.58

-

nC

Input Capacitance

-

409

-

Output Capacitance

-

55

-

Reverse Transfer Capacitance

-

42

-

pF

f =1MHz

-

6.2

-

Turn-On Time

2

-

3.2

-

-

41.2

-

Turn-Off Time

-

14.5

-

ns

Source-Drain Diode

Diode Forward Voltage

2

-

-

-1

V

Reverse Recovery Time

2

-

13.2

-

nS

Reverse Recovery Charge

-

5.4

-

nC

dl/dt=100A / μS

Continuous Source Current (Body Diode)

-

-

-0.5

A

Note:

1. Pulse width limited by Max. junction temperature.

2. Pulse width 300

≦

μs, duty cycle 2%.

≦

3. Surface mounted on FR4 board, t. 10sec

≦