SSG4502CE

N & P-Ch Enhancement Mode Power MOSFET

Ω

Ω

Ω

Ω

Ω

Ω

Elektronische Bauelemente

26-Dec-2011 Rev. A

Page 2 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

Drain-Source Breakdown Voltage

30

-

-

V

Gate Threshold Voltage

1

-

-

V

Gate-Source Leakage Current

-

-

±10

nA

Drain-Source Leakage Current

-

-

1

µA

On-State Drain Current

1

-

-

20

A

Static Drain-Source On-Resistance

1

-

-

16

m

-

-

20

Forward Transconductance

1

-

40

-

S

Pulsed Source Current (Body Diode)

1

-

5

-

A

Dynamic

Total Gate Charge

-

12

nC

Gate-Source Charge

-

3.3

-

Gate-Drain (“Miller”) Change

-

4.5

-

Turn-on Delay Time

-

20

-

nS

Rise Time

-

9

-

Turn-off Delay Time

-

70

-

Fall Time

-

20

-

Notes:

1. Pulse test: PW ≦ 300us duty cycle ≦ 2%.

2. Guaranteed by design, not subject to production testing.