Elektronische Bauelemente

SSG4940NC

Dual-N Enhancement Mode Power MOSFET

20-Feb-2012 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Static

Gate-Threshold Voltage

1

-

-

V

Gate-Body Leakage

-

-

nA

-

-

1

μA

Zero Gate Voltage Drain Current

-

-

25

μA

On-State Drain Current

1

15

-

-

A

-

-

23

Drain-Source On-Resistance

1

-

-

30

mΩ

Forward Transconductance

1

-

15

-

S

Diode Forward Voltage

-

0.74

-

V

Gate Resistance

1.4

Ω

f=1.0MHz

Dynamic

2

Input Capacitance

1389

Output Capacitance

169

Reverse Transfer Capacitance

134

pF

f=1MHz

Total Gate Charge

-

13

-

Gate-Source Charge

-

3.4

-

Gate-Drain Charge

-

7

-

nC

Turn-On Delay Time

-

8

-

Rise Time

-

10

-

Turn-Off Delay Time

-

37

-

Fall Time

-

16

-

nS

Notes:

1

Pulse test：PW≦300μs duty cycle≦2%.

2

Guaranteed by design, not subject to production testing.