SSPS922NE datasheet(2/4 Pages) SECOS

2 / 4 page

SSPS922NE

8.2 A , 20 V , RDS(ON) 17.5 mΩ

Ω

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

03-Mar-2012 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate-Threshold Voltage

VGS(th)

0.4

VDS=VGS, ID=250µA

Gate-Body Leakage Current

IGSS

±100

VDS=0, VGS=±8V

Zero Gate Voltage Drain Current

IDSS

µA

VDS=16V, VGS=0

VDS=16V, VGS=0, TJ=55°C

On-State Drain Current

ID(on)

VDS=5V, VGS=4.5V

Drain-Source On-Resistance

RDS(ON)

17.5

VGS=4.5V, ID=2A

VGS=2.5V, ID=2A

Forward Transconductance

gfs

VDS=10V, ID=6.6A

Diode Forward Voltage

VSD

0.68

IS=1.1A, VGS=0

Dynamic

Total Gate Charge

VDS=10V,

VGS=4.5V,

ID=6.6A

Gate-Source Charge

Qgs

2.7

Gate-Drain Charge

Qgd

2.1

Input Capacitance

Ciss

877

VDS=15 V,

VGS=0

f=1MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

254

Turn-On Delay Time

Td(on)

VDS=10V

ID=6.6A

VGEN=4.5V

RL=1.6

RGEN=6

Rise Time

Turn-Off Delay Time

Td(off)

604

Fall Time

198

Notes:

Pulse test：PW ≦ 300µs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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