SSPS7333P

Ω

Ω

Ω

P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

19-Jul-2011 Rev. A

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate-Threshold Voltage

-1

-

-

V

Gate-Body Leakage Current

-

-

±100

nA

Zero Gate Voltage Drain Current

-

-

-1

µA

-

-

-5

Drain-Source On-Resistance

1

-

-

20

m

-

-

36

Diode Forward Voltage

-

-0.8

-

V

Dynamic

2

Total Gate Charge

-

33

-

nC

Gate-Source Charge

-

5

-

Gate-Drain Charge

-

9

-

Turn-On Delay Time

-

10

-

nS

Rise Time

-

6

-

Turn-Off Delay Time

-

34

-

Fall Time

-

20

-

Notes:

1.

Pulse test：PW ≦ 300µs duty cycle ≦ 2%.

2.

Guaranteed by design, not subject to production testing.