SSPS7334N

Ω

Ω

Ω

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

19-Jul-2011 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate-Threshold Voltage

1

-

3

V

Gate-Body Leakage Current

-

-

±100

nA

Zero Gate Voltage Drain Current

-

-

1

µA

-

-

25

On-State Drain Current

1

20

-

-

A

Drain-Source On-Resistance

1

-

-

8.5

m

-

-

11.5

Forward Transconductance

1

-

40

-

S

Diode Forward Voltage

-

0.7

-

V

Dynamic

2

Total Gate Charge

-

11

-

nC

Gate-Source Charge

-

6

-

Gate-Drain Charge

-

4

-

Input Capacitance

-

1302

-

pF

f=1MHz

Output Capacitance

-

423

-

Reverse Transfer Capacitance

-

171

-

Turn-On Delay Time

-

10

-

nS

Rise Time

-

5

-

Turn-Off Delay Time

-

22

-

Fall Time

-

4

-

Notes:

1.

Pulse test：PW ≦ 300µs duty cycle ≦ 2%.

2.

Guaranteed by design, not subject to production testing.