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BAS85 数据表(PDF) 2 Page - Vishay Siliconix

部件名 BAS85
功能描述  Small Signal Schottky Diode
PDF  4 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

BAS85 数据表(HTML) 2 Page - Vishay Siliconix

  BAS85 Datasheet HTML 1Page - Vishay Siliconix BAS85 Datasheet HTML 2Page - Vishay Siliconix BAS85 Datasheet HTML 3Page - Vishay Siliconix BAS85 Datasheet HTML 4Page - Vishay Siliconix  
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Document Number 85510
Rev. 1.9, 05-Aug-10
BAS85
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Reverse breakdown voltage
IR = 10 µA (pulsed)
V(BR)
30
V
Leakage current
VR = 25 V
IR
0.2
2
µA
Forward voltage
Pulse test tp < 300 µs,
IF = 0.1 mA
VF
240
mV
Pulse test tp < 300 µs, IF = 1 mA
VF
320
mV
Pulse test tp < 300 µs,
IF = 10 mA
VF
400
mV
Pulse test tp < 300 µs,
IF = 30 mA
VF
500
mV
Pulse test tp < 300 µs,
IF = 100 mA
VF
800
mV
Diode capacitance
VR = 1 V, f = 1 MHz
CD
10
pF
Reverse recovery time
IF = 10 mA, IR = 10 mA,
Irr = 1 mA,
trr
5ns
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
0
20
40
60
80
100
120
140
160
180
200
25
50
75
100
125
150
T
j - Junction Temperature (°C)
15822
V
R = 30 V
R
thJA = 540 kW
P
R - Limit
at 100 % V
R
P
R - Limit
at 80 % V
R
Figure 2. Reverse Current vs. Junction Temperature
1
10
100
1000
25
50
75
100
125
150
15823
V
R = VRRM
T
j - Junction Temperature (°C)



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