STEF12 datasheet(6/20 Pages) STMICROELECTRONICS

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Electrical characteristics

STEF12

6/20

Doc ID 019056 Rev 3

Electrical characteristics

VCC = 12 V, VEN = 3.3 V, CI = 10 µF, CO = 47 µF, TJ = 25 °C (unless otherwise specified).

Table 6.

Electrical characteristics for STEF12

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Under/Overvoltage protection

VClamp

Output clamping voltage

VCC = 18 V

13.8

16.2

VUVLO

Undervoltage lockout

Turn-on, voltage rising

7.7

8.5

9.3

VHyst

UVLO hysteresis

0.80

Power MOSFET

tdly

Delay time

Enabling of chip to ID = 100 mA

with a 1 A resistive load

350

µs

RDSon

On-resistance

(1)

- 40 °C < TJ < 125 °C

(2)

VOFF

Off state output voltage

VCC = 18 V, VGS = 0, RL = infinite

100

Continuous current

0.5in2 pad, TA = 25 °C

(1)

3.6

Minimum copper, TA = 80 °C

1.7

Current limit

IShort

Short-circuit current limit

RLimit = 22 Ω

3.3

4.4

5.5

ILim

Overload current limit

RLimit = 22 Ω

4.4

dv/dt circuit

dv/dt

Output voltage ramp time

Enable to VOUT = 11.7 V, No

Cdv/dt

0.5

0.9

2.6

Enable/Fault

VIL

Low level input voltage

Output disabled

0.35

0.58

0.81

VI(INT)

Intermediate level input voltage

Thermal fault, output disabled

0.82

1.4

1.95

VIH

High level input voltage

Output enabled

1.96

2.64

3.3

VI(MAX)

High state maximum voltage

3.4

4.3

5.4

IIL

Low level input current (sink)

VEnable = 0 V

-10

-30

µA

High level leakage current for

external switch

VEnable = 3.3 V

µA

Maximum fan-out for fault signal

Total numbers of chips that can

be connected to this pin for

simultaneous shutdown

3Units

Total device

IBias

Bias current

Device operational

1.5

Thermal shutdown

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