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BAS33 数据表(PDF) 2 Page - Vishay Siliconix |
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BAS33 数据表(HTML) 2 Page - Vishay Siliconix |
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2 / 3 page ![]() www.vishay.com 2 Document Number 85541 Rev. 1.7, 17-Aug-10 BAS33, BAS34 Vishay Semiconductors For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typical Characteristics Tamb = 25 °C, unless otherwise specified Package Dimensions in millimeters (inches): DO-35 Parameter Test condition Part Symbol Min. Typ. Max. Unit Forward voltage IF = 100 mA VF 1000 mV Reverse current E ≤ 300 lx, VR IR 13 nA E ≤ 300 lx, VR, Tj = 125 °C IR 0.5 μA E ≤ 300 lx, VR = 15V BAS33 IR 0.5 1 nA E ≤ 300 lx, VR = 30 V BAS34 IR 0.5 1 nA Breakdown voltage IR = 5 µA, tp/T = 0.01, tp = 0.3 ms BAS33 V(BR) 40 V BAS34 V(BR) 70 V Diode capacitance VR = 0, f = 1 MHz CD 3pF Figure 1. Reverse Current vs. Junction Temperature 040 80 120 160 1 10 100 1000 10000 Tj - Junction Temperature (°C) 200 94 9079 Scattering Limit VR = VRRM Figure 2. Forward Current vs. Forward Voltage 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 VF - Forward Voltage (V) 2.0 94 9078 Scattering Limit Tj =25 °C 94 9366 26 (1.024) min. 3.9 (0.154) max. 26 (1.024) min. Cathode identification Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 |
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