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BAV19 数据表(PDF) 2 Page - Vishay Siliconix

部件名 BAV19
功能描述  Small Signal Switching Diodes, High Voltage
PDF  4 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

BAV19 数据表(HTML) 2 Page - Vishay Siliconix

  BAV19 Datasheet HTML 1Page - Vishay Siliconix BAV19 Datasheet HTML 2Page - Vishay Siliconix BAV19 Datasheet HTML 3Page - Vishay Siliconix BAV19 Datasheet HTML 4Page - Vishay Siliconix  
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BAV17, BAV18, BAV19, BAV20, BAV21
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 02-Aug-12
2
Document Number: 85543
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Thermal resistance junction to ambient air
l = 4 mm, TL = constant
RthJA
300
K/W
Junction temperature
Tj
175
°C
Storage temperature range
Tstg
- 65 to + 175
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 100 mA
VF
1000
mV
Reverse current
VR = 20 V
BAV17
IR
100
nA
VR = 50 V
BAV18
IR
100
nA
VR = 100 V
BAV19
IR
100
nA
VR = 150 V
BAV20
IR
100
nA
VR = 200 V
BAV21
IR
100
nA
Tj = 100 °C, VR = 20 V
BAV17
IR
15
μA
Tj = 100 °C, VR = 50 V
BAV18
IR
15
μA
Tj = 100 °C, VR = 100 V
BAV19
IR
15
μA
Tj = 100 °C, VR = 150 V
BAV20
IR
15
μA
Tj = 100 °C, VR = 200 V
BAV21
IR
15
μA
Breakdown voltage
IR = 5 μA, tp/T = 0.01,
tp = 0.3 ms
BAV17
V(BR)
25
V
BAV18
V(BR)
60
V
BAV19
V(BR)
120
V
BAV20
V(BR)
200
V
BAV21
V(BR)
250
V
Diode capacitance
VR = 0 V, f = 1 MHz,
CD
1.5
pF
Differential forward resistance
IF = 10 mA
rf
5
Reverse recovery time
IF = IR = 30 mA, iR = 3 mA
RL = 100 
trr
50
ns
0
40
80
120
160
0.01
0.1
1
10
1000
Tj -Junction Temperature (°C)
200
94 9084
100
Scattering Limit
V
R = VRRM
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
VF -Forward Voltage (V)
2.0
94 9085
Scattering Limit
T
j = 25 °C



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