LS4150 datasheet(2/4 Pages) VISHAY

2 / 4 page

LS4150

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Vishay Semiconductors

Rev. 1.9, 14-Feb-12

Document Number: 85562

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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Reverse Current vs. Junction Temperature

Fig. 2 - Forward Current vs. Forward Voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 1 mA

540

620

IF = 10 mA

660

740

IF = 50 mA

760

860

IF = 100 mA

820

920

IF = 200 mA

870

1000

Reverse current

VR = 50 V

100

VR = 50 V, Tj = 150 °C

100

μA

Diode capacitance

VR = 0, f = 1 MHz, VHF = 50 mV

2.5

Reverse recovery time

IF = IR = 10 to 100 mA,

iR = 0.1 x IR, RL = 100 

trr

4ns

120

160

200

0.01

0.1

100

TJ - Junction Temperature (°C)

94 9100

Scattering Limit

R = 50 V

0.4

0.8

1.2

1.6

0.1

100

1000

VF - Forward Voltage (V)

2.0

94 9162

Scattering Limit

J = 25 °C

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