2SA950 datasheet(1/2 Pages) TGS

部件名	2SA950

功能描述	TO-92 Plastic-Encapsulate Transistors (PNP)

PDF	2 Pages

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制造商	TGS [Tiger Electronic Co.,Ltd]

网页	http://www.tgselec.com

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1 / 2 page

TO-92 Plastic-Encapsulate Transistors

2SA950

TRANSISTOR (PNP)

FEATURES

1W

Output Applications

Complementary to 2SC2120

MAXIMUM RATINGS (

Ta=25

unless otherwise noted

℃

)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-35

V

VCEO

Collector-Emitter Voltage

-30

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.8

A

PC

Collector Power Dissipation

0.6

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55 to +150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

M

in

T

yp

Max

U

nit

Collector-base breakdown voltage

V(BR)CBO

IC= -0.1mA , IE=0

-35

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -10mA , IB=0

-30

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -0.1mA, IC=0

-5

V

Collector cut-off current

ICBO

VCB= -35V, IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB= -5V, IC=0

-0.1

μA

hFE(1)

VCE=-1V, IC=-100mA

100

320

DC current gain

hFE(2)

VCE=-1V, IC= -700mA

35

Collector-emitter saturation voltage

VCE(sat)

IC= -500mA, IB= -20mA

-0.7

V

Emitter-base voltage

VBE

VCE=-1V, IC=-10mA

-0.5

-0.8

V

Collector Output Capacitance

Cob

VCB=-10V,IE=0

f=1MHz

19

pF

Transition frequency

fT

VCE=-5V,IC=-10mA

120

MHz

CLASSIFICATION OF hFE(1)

Rank

O

Y

Range

100-200

160-320

TO-92

1.EMITTER

2. COLLECTOR

3. BASE

B,Nov,2011

TIGER ELECTRONIC CO.,LTD

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