2SC1815

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The 2SC1815 is designed for use in driver stage of AF amplifier

general purpose amplification.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................... -55~+150

°C

Junction Temperature ..................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................ 400 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 50 V

VCEO Collector to Emitter Voltage ...................................................................................... 50 V

VEBO Emitter to Base Voltage .............................................................................................. 5 V

IC Collector Current ........................................................................................................ 150 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

50

-

-

V

IC=100uA, IE=0

BVCEO

50

-

-

V

IC=1mA, IB=0

BVEBO

5

-

-

V

IE=10uA, IC=0

ICBO

-

-

100

nA

VCB=60V, IE=0

IEBO

-

-

100

nA

VEB=5V, IC=0

VCE(sat)

-

-

250

mV

IC=100mA, IB=10mA

VBE(sat)

-

-

1

V

IC=100mA, IB=10mA

hFE1

120

-

700

VCE=6V, IC=2mA

hFE2

25

-

-

VCE=6V, IC=150mA

fT

80

-

-

MHz

VCE=10V, IC=1mA, f=100MHz

Cob

-

-

3.5

pF

VCB=10V, f=1MHz, IE=0

Classification of hFE1

Rank

Y

GR

BL

Range

120-240

200-400

350-700

TIGER ELECTRONIC CO.,LTD

TIGER ELECTRONIC CO.,LTD