BC337 datasheet(1/1 Pages) TGS

部件名	BC337

功能描述	TO-92 Plastic-Encapsulate Transistors (NPN)

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制造商	TGS [Tiger Electronic Co.,Ltd]

网页	http://www.tgselec.com

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TO-92 Plastic-Encapsulate Transistors

BC337/BC338

TRANSISTOR

(NPN)

FEATURES

Power dissipation

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

BC337

BC338

50

30

V

VCEO

Collector-Emitter Voltage

BC337

BC338

45

25

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

800

mA

PD

Total Device Dissipation

625

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

BC337

BC338

VCBO

IC= 100uA, IE=0

50

30

V

Collector-emitter breakdown voltage

BC337

BC338

VCEO

IC= 10mA ,

IB=0

45

25

V

Emitter-base breakdown voltage

VEBO

IE= 10uA, IC=0

5

V

Collector cut-off current

BC337

BC338

ICBO

VCB= 45V, IE=0

VCB= 25V, IE=0

0.1

uA

Collector cut-off current

BC337

BC338

ICEO

VCE= 40V, IB=0

VCE= 20V, IB=0

0.2

uA

Emitter cut-off current

IEBO

VEB= 4 V, IC=0

0.1

uA

BC337/BC338

BC337-16/BC338-16

BC337-25/BC338-25

BC337-40/BC338-40

hFE(1)

VCE=1V, IC= 100mA

100

160

250

630

250

400

630

DC current gain

hFE(2)

VCE=1V, IC= 300mA

60

Collector-emitter saturation voltage

VCE(sat)

IC=500mA, IB= 50mA

0.7

V

Base-emitter saturation voltage

VBE(sat)

IC= 500mA, IB=50mA

1.2

V

Base-emitter voltage

VBE

VCE=1V, IC= 300mA

1.2

V

Transition frequency

f T

VCE= 5V, IC= 10mA

f = 100MHz

210

MHz

Collector Output Capacitance

Cob

VCB=10V,IE=0

f=1MHZ

15

pF

TO-92

1. COLLECTOR

2.BASE

3. EMITTER

A,May,2011

TIGER ELECTRONIC CO.,LTD

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