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BSM181F 数据表(PDF) 5 Page - Siemens Semiconductor Group |
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BSM181F 数据表(HTML) 5 Page - Siemens Semiconductor Group |
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5 / 7 page ![]() Semiconductor Group 68 Continuous drain current I D = f (TC) parameter: V GS ≥ 10 V, T j = 150 ˚C Drain source on-state resistance R DS(on) = f (T j) parameter: I D = 34 A; VGS = 10 V, (spread) Drain-source breakdown voltage V (BR)DSS (Tj) = b × V(BR)DSS (25 ˚C) Gate threshold voltage V GS(th) = f (Tj) parameter: V DS = VGS, I D = 1 mA BSM 181 F |
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