20TQ035PBF datasheet(2/7 Pages) VISHAY

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VS-20TQ0..PbF Series, VS-20TQ0..-N3

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Vishay Semiconductors

Revision: 26-Aug-11

Document Number: 94167

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Note

(1) Pulse width < 300 μs, duty cycle < 2 %

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

See fig. 1

VFM (1)

20 A

TJ = 25 °C

0.57

40 A

0.73

20 A

TJ = 125 °C

0.51

40 A

0.67

Maximum reverse leakage curent

See fig. 2

IRM (1)

TJ = 25 °C

VR = Rated VR

2.7

TJ = 125 °C

105

Maximum junction capacitance

VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C

1400

Typical series inductance

Measured lead to lead 5 mm from package body

8.0

Maximum voltage rate of change

dV/dt

Rated VR

10 000

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and

storage temperature range

TJ, TStg

- 55 to 150

°C

Maximum thermal resistance,

junction to case

RthJC

DC operation

See fig. 4

1.50

°C/W

Typical thermal resistance,

case to heatsink

RthCS

Mounting surface, smooth and greased

0.50

Approximate weight

0.07

oz.

Mounting torque

minimum

6 (5)

kgf ·

cm

(lbf ·

in)

maximum

12 (10)

Marking device

Case style TO-220AC

20TQ035

20TQ040

20TQ045

20TQ035PBF 数据表(PDF) 2 Page - Vishay Siliconix

20TQ035PBF 数据表(HTML) 2 Page - Vishay Siliconix

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