MBR3045WTPBF datasheet(2/7 Pages) VISHAY

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VS-MBR30..WTPbF Series, VS-MBR30..WT-N3 Series

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Vishay Semiconductors

Revision: 30-Aug-11

Document Number: 94293

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Note

(1) Pulse width < 300 μs, duty cycle < 2 %

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

VFM (1)

30 A

TJ = 25 °C

0.76

20 A

TJ = 125 °C

0.60

30 A

0.72

Maximum instantaneous reverse current

IRM (1)

TJ = 25 °C

Rated DC voltage

1.0

TJ = 125 °C

100

Threshold voltage

VF(TO)

TJ = TJ maximum

0.29

Forward slope resistance

13.8



Maximum junction capacitance

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

800

Typical series inductance

Measured from top of terminal to mounting plane

7.5

Maximum voltage rate of change

dV/dt

Rated VR

10 000

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction temperature range

- 65 to 150

°C

Maximum storage temperature range

TStg

- 65 to 175

Maximum thermal resistance,

junction to case per leg

RthJC

DC operation

1.40

°C/W

Typical thermal resistance,

case to heatsink

RthCS

Mounting surface, smooth and greased

0.24

Approximate weight

0.21

oz.

Mounting torque

minimum

6 (5)

kgf · cm

(lbf · in)

maximum

12 (10)

Marking device

Case style TO-247AC (JEDEC)

MBR3035WT

MBR3045WT

MBR3045WTPBF 数据表(PDF) 2 Page - Vishay Siliconix

MBR3045WTPBF 数据表(HTML) 2 Page - Vishay Siliconix

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