| 数据搜索系统,热门电子元器件搜索 |
|
6EWL06FN-M3 数据表(PDF) 2 Page - Vishay Siliconix |
|
|
|||||||||||||||||||||||||||||
6EWL06FN-M3 数据表(HTML) 2 Page - Vishay Siliconix |
|
2 / 8 page ![]() www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93502 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 31-Mar-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EWL06FN-M3 Vishay Semiconductors Ultralow VF Ultrafast Rectifier, 6 A FRED Pt® New Product DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Reverse recovery time trr IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 59 70 ns IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - 75 - TJ = 25 °C IF = 6A dIF/dt = 200 A/μs VR = 390 V - 154 - TJ = 125 °C - 215 - Peak recovery current IRRM TJ = 25 °C - 13.3 - A TJ = 125 °C - 15.4 - Reverse recovery charge Qrr TJ = 25 °C - 1055 - nC TJ = 125 °C - 1600 - THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range TJ, TStg - 65 - 175 °C Thermal resistance, junction to case per leg RthJC -- 3 °C/W Approximate weight 0.3 g 0.01 oz. Marking device Case style D-PAK (TO-252AA) 6EWL06FN |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |