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VT3080C 数据表(PDF) 2 Page - Vishay Siliconix |
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VT3080C 数据表(HTML) 2 Page - Vishay Siliconix |
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2 / 5 page ![]() www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 89168 2 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Revision: 08-Sep-09 VT3080C, VFT3080C, VBT3080C, VIT3080C Vishay General Semiconductor New Product Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage IR = 1.0 mA TA = 25 °C VBR 80 (minimum) - V Instantaneous forward voltage per diode IF = 5 A TA = 25 °C VF (1) 0.52 - V IF = 7.5 A 0.58 - IF = 15 A 0.75 0.82 IF = 5 A TA = 125 °C 0.46 - IF = 7.5 A 0.52 - IF = 15 A 0.65 0.70 Reverse current per diode VR = 80 V TA = 25 °C IR (2) 30 700 µA TA = 125 °C 20 35 mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VT3080C VFT3080C VBT3080C VIT3080C UNIT Typical thermal resistance per diode RθJC 2.5 6.0 2.5 2.5 °C/W per device 2.0 5.0 2.0 2.0 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT3080C-E3/4W 1.89 4W 50/tube Tube ITO-220AB VFT3080C-E3/4W 1.76 4W 50/tube Tube TO-263AB VBT3080C-E3/4W 1.39 4W 50/tube Tube TO-263AB VBT3080C-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VIT3080C-E3/4W 1.46 4W 50/tube Tube Case Temperature (°C) 35 25 0 0 75 175 25 100 150 5 50 125 10 30 20 Resistive or Inductive Load V(B,I)T3080C VFT3080C 15 D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 1.0 Average Forward Current (A) 14 0 0 8 18 212 2 416 610 14 8 4 D = t p/T t p T 6 D = 0.8 12 10 |
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