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MP6M12 数据表(PDF) 2 Page - Rohm |
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MP6M12 数据表(HTML) 2 Page - Rohm |
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2 / 11 page ![]() www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet MP6M12 Electrical characteristics (Ta = 25 C) <Tr1(Nch)> Symbol Min. Typ. Max. Unit Gate-source leakage IGSS - - ±10 AVGS=±20V, VDS=0V Drain-source breakdown voltage V (BR)DSS 30 - - V ID=1mA, VGS=0V Zero gate voltage drain current IDSS -- 1 AVDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA -30 42 ID=5.0A, VGS=10V -40 56 ID=5.0A, VGS=4.5V -45 63 ID=5.0A, VGS=4.0V Forward transfer admittance l Yfs l 2.5 - - S VDS=10V, ID=5.0A Input capacitance Ciss - 250 - pF VDS=10V Output capacitance Coss - 90 - pF VGS=0V Reverse transfer capacitance Crss - 45 - pF f=1MHz Turn-on delay time td(on) -6 - ns ID=2.5A, VDD 15V Rise time tr - 27 - ns VGS=10V Turn-off delay time td(off) - 26 - ns RL=6 Fall time tf -5 - ns RG=10 Total gate charge Qg - 4.0 - nC ID=5.0A Gate-source charge Qgs - 1.2 - nC VDD 15V Gate-drain charge Qgd - 1.2 - nC VGS=5V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Symbol Min. Typ. Max. Unit Forward Voltage VSD - - 1.2 V Is=5.0A, VGS=0V *Pulsed Parameter Conditions Conditions Parameter Static drain-source on-state resistance RDS (on) m * * * * * * * * * * * * * * * * * 2/10 2011.10 - Rev.A |
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