CMPT8099 NPN

CMPT8599 PNP

SURFACE MOUNT

COMPLEMENTARY

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT8099 and

CMPT8599 are complementary silicon transistors

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for

general purpose audio amplifier applications.

MARKING CODES: CMPT8099: CKB

CMPT8599: C2W

SOT-23 CASE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

CMPT8099

CMPT8599

UNITS

Collector-Base Voltage

VCBO

80

80

V

Collector-Emitter Voltage

VCEO

80

80

V

Emitter-Base Voltage

VEBO

6.0

5.0

V

Continuous Collector Current

IC

500

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

CMPT8099

CMPT8599

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICBO

VCB=80V

0.1

0.1

µA

IEBO

VBE=6.0V

0.1

-

µA

IEBO

VBE=4.0V

-

0.1

µA

BVCBO

IC=100µA

80

80

V

BVCEO

IC=10mA

80

80

V

BVEBO

IE=10µA

6.0

5.0

V

VCE(SAT)

IC=100mA, IB=5.0mA

0.4

0.4

V

VCE(SAT)

IC=100mA, IB=10mA

0.3

0.3

V

VBE(ON)

VCE=5.0V, IC=10mA

0.6

0.8

0.6

0.8

V

hFE

VCE=5.0V, IC=1.0mA

100

300

100

300

hFE

VCE=5.0V, IC=10mA

100

100

hFE

VCE=5.0V, IC=100mA

75

75

fT

VCE=5.0V, IC=10mA, f=100MHz

150

150

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

6.0

4.5

pF

Cib

VBE=0.5V, IC=0, f=1.0MHz

25

30

pF

R5 (1-February 2010)

www.centra lsemi.com