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SBP1710-R 数据表(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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SBP1710-R 数据表(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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2 / 6 page ![]() SBP1710-R SBP1710-R SBP1710-R SBP1710-R 2/6 Steady, Steady, Steady, Steady, all all all all for for for for your your your your advance advance advance advance Electrical Characteristics (T C =25℃ unless otherwise noted) Symbol Parameter Test conditions Value Units Min Typ Max ICBO Collector Cut-off Current VCB=500V, Ie=0A - - 10 µA IEBO Emitter Cut-off Current VEB=5V, Ic=0A - - 10 µA BVCBO Collector-Base Breakdown Voltage Ic=1mA,Ie=0 900 - - V BVCEO Collector-Emitter Breakdown Voltage Ic=5mA,Ib=open 500 - - V BVEBO Emitter-Base Breakdown Voltage Ie=1mA,Ic=0 7 - - V VCE(sat) Collector -Emitter Saturation Voltage Ic=3A,Ib=0.6A - - 1 V VBE(sat) Base -Emitter saturation Voltage Ic=3A,Ib=0.6A - - 1.5 V IEBO Emitter -Base Cutoff Current Veb=5V,Ic=0 - - 10 µA hFE DC Current Gain Vce=5V,Ic=0.6A 20 - 50 Vce=5V,Ic=3A 8 - - fT Gain-Bandwidth Product Vce=10V,Ic=0.6A - - 18 MHz Cob Output Capacitance VCB=10V, f=1MHz - - 80 pF ton Turn on Time VCC=5V,IC=0.5A - - 0.6 µs ts Storage Time VCC=5V,IC=0.5A 3 - 8 µs tf Fall Time VCC=5V,IC=0.5A - - 0.4 µs Note: Pulse Test: Pulse width≤300 µs,Duty cycle 10% |
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