BUZ101SLE3045A datasheet(2/8 Pages) SIEMENS

部件名	BUZ101SLE3045A

功能描述	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)

PDF	8 Pages

Scroll/Zoom	100%

制造商	SIEMENS [Siemens Semiconductor Group]

网页	http://www.siemens.com/

标志

2 / 8 page

Semiconductor Group

29/Jan/1998

BUZ 101 SL

SPP20N05L

Maximum Ratings

Parameter

Symbol

Values

Unit

Operating temperature

-55 ... + 175

°C

Storage temperature

Tstg

-55 ... + 175

Thermal resistance, junction - case

RthJC

≤ 2.7

K/W

Thermal resistance, junction - ambient

RthJA

≤ 62

IEC climatic category, DIN IEC 68-1

55 / 175 / 56

Electrical Characteristics,

at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

V(BR)DSS

Gate threshold voltage

VGS=VDS, ID = 40 µA

VGS(th)

1.2

1.6

Zero gate voltage drain current

VDS = 50 V, VGS = 0 V, Tj = -40 °C

VDS = 50 V, VGS = 0 V, Tj = 25 °C

VDS = 50 V, VGS = 0 V, Tj = 150 °C

IDSS

0.1

100

0.1

µA

Gate-source leakage current

VGS = 20 V, VDS = 0 V

IGSS

100

Drain-Source on-resistance

VGS = 4.5 V, ID = 14 A

VGS = 10 V, ID = 14 A

RDS(on)

0.034

0.057

0.04

0.07

Ω

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