PIN Diodes for Microwave Switch Designs

Rev. V2

AN3021

3

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

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Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

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Table 2: Relative PIN Diode Performance Evaluation Matrix

Surface Mount Assembly

Key Parameter

Plastic

MELF or Hi-

Pax

SURMOUNT

Cerma Chip

Flip Chip

Beam Lead

1 MHz < F < 1 GHz

Best Selection

100 MHz < F < 4 GHz

Best Selection

4 GHz < F < 20 GHz

Best Selection

20 GHz < F < 60 GHz

Best Selection

Best Selection

100 MHz < F < 20 GHz

Best Selection

Pinc < 0.1 W

Best Selection

0.1 W < Pinc < 1 W

Best Selection

Best Selection

1 W < Pinc < 20 W

Best Selection

20 W < Pinc < 200 W

Best Selection

Best Selection

Relative Cost Index

Lowest

Moderate/Highest Moderate/Highest

Lowest

Moderate

Highest

Chip & Wire Hybrid Assembly

Conclusions:

1. Plastic Devices are best suited where Cost is a decision driver, the Operating Frequency < 4 GHz, and the

RF C.W. Incident Power < 1 W ( + 30 dBm ).

2. MELF or HIPAX Ceramic Devices are best utilized where Highest Average Power ( > 20 W C.W. ) is the

Primary Design Goal and the Operating Frequency < 1 GHz.

3. SURMOUNT Devices are probably the Best Overall Compromise in Device Selection. They can Operate

( In Various bands ) from 10 MHz – 20 GHz and Perform well with RF Incident Power < 20 W C.W ( + 43

dBm ).

4. Cermachip Devices provide the Best Overall Performance for Operating Frequeny ( 100 MHz – 20

GHz ) , and RF Incident Power < 200 W C.W (+ 53 dBm ).

5. Flip Chip Devices are best suited for mmwave Frequencies < 60 GHz, where the RF Incident C.W. < 1W

( + 30 dBm ) and Conductive Epoxy or Soldering is Required.

6. Beam Lead Devices are best suited for mmwave Frequencies < 60 GHz, where the RF Incident C.W. <

0.1W ( + 20 dBm ) and Thermo Compression Bonding is Required.