FS30AS-2 datasheet(1/4 Pages) MITSUBISHI

部件名	FS30AS-2

功能描述	HIGH-SPEED SWITCHING USE

PDF	4 Pages

Scroll/Zoom	100%

制造商	MITSUBISHI [Mitsubishi Electric Semiconductor]

网页	http://www.mitsubishichips.com

标志

1 / 4 page

Feb.1999

FS30AS-2

OUTLINE DRAWING

Dimensions in mm

MP-3

MITSUBISHI Nch POWER MOSFET

FS30AS-2

HIGH-SPEED SWITCHING USE

APPLICATION

Motor control, Lamp control, Solenoid control

DC-DC converter, etc.

100

±20

30

120

30

120

35

–55 ~ +150

0.26

VGS = 0V

VDS = 0V

L = 100

µH

Typical value

Drain-source voltage

Gate-source voltage

Drain current

Drain current (Pulsed)

Avalanche drain current (Pulsed)

Source current

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Weight

V

A

W

°C

g

VDSS

VGSS

ID

IDM

IDA

IS

ISM

PD

Tch

Tstg

—

Symbol

MAXIMUM RATINGS (Tc = 25

°C)

Parameter

Conditions

Ratings

Unit

¡10V DRIVE

¡VDSS ................................................................................ 100V

¡rDS (ON) (MAX) ........................................................... 100m

Ω

¡ID ......................................................................................... 30A

¡Integrated Fast Recovery Diode (TYP.) ............. 95ns

6.5

2.3

0.9MAX.

2.3

1.0

0.5

± 0.1

0.5

± 0.2

0.8

5.0

± 0.2

A

q GATE

w DRAIN

e SOURCE

r DRAIN

wr

q

qwe

r

e

类似零件编号 - FS30AS-2

制造商	部件名	数据表	功能描述
Powerex Power Semicondu...	FS30AS-2	43Kb / 4P	Nch POWER MOSFET HIGH-SPEED SWITCHING USE
Renesas Technology Corp	FS30AS-2	171Kb / 7P	High-Speed Switching Use Nch Power MOS FET
Inchange Semiconductor ...	FS30AS-2	259Kb / 2P	isc N-Channel MOSFET Transistor
Renesas Technology Corp	FS30AS-2-T13	171Kb / 7P	High-Speed Switching Use Nch Power MOS FET

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