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R5F5630ECDBG 数据表(PDF) 155 Page - Renesas Technology Corp |
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R5F5630ECDBG 数据表(HTML) 155 Page - Renesas Technology Corp |
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155 / 165 page  R01DS0060EJ0100 Rev.1.00 Page 155 of 168 Sep 13, 2011 RX630 Group 5. Electrical Characteristics 5.13 E2 Flash Characteristics Note 1. Definition of reprogram/erase cycle: The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000), erasing can be performed n times for each block. For instance, when 128-byte programming is performed 16 times for different addresses in 2-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However, programming the same address for several times as one erasing is not enabled (over writing is prohibited). Note 2. This indicates the minimum number that guarantees the characteristics after reprogramming. (The guaranteed value is in the range from one to the minimum number.) Note 3. This indicates the characteristic when reprogram is performed within the specification range including the minimum number. Table 5.30 E2 Flash Characteristics Conditions: VCC = AVCC0 = VCC_USB = 2.7 to 3.6 V, VREFH/VREFH0 = 2.7 V to AVCC0 VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0 V Temperature range for the programming/erasure operation: Ta = Topr Item Symbol FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 50 MHz Unit Min. Typ. Max. Min. Typ. Max. Programming time NPEC 100 hours 2 bytes tDP2 — 0.7 6 — 0.25 2 ms Programming time NPEC > 100 hours 2 bytes tDP2 — 0.7 6 — 0.25 2 ms Erasure time NPEC 100 hours 32 bytes tDE32 —4 40 —2 20 ms Erasure time NPEC > 100 hours 32 bytes tDE32 —7 40 —4 20 ms Blank check time 2 bytes tDBC2 — — 100 — — 30 μs Reprogram/erase cycle*1 NDPEC 100000*2 — — 100000*2 —— Times Suspend delay time during programming tDSPD — — 250 — — 120 μs First suspend delay time during erasing (in suspend priority mode) tDSESD1 — — 250 — — 120 μs Second suspend delay time during erasing (in suspend priority mode) tDSESD2 — — 500 — — 300 μs Suspend delay time during erasing (in erasure priority mode) tDSEED — — 500 — — 300 μs Data hold time*3 tDDRP 10 — — 10 — — Year |
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