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RJK0328DPB-01 数据表(PDF) 3 Page - Renesas Technology Corp

部件名 RJK0328DPB-01
功能描述  Silicon N Channel Power MOS FET Power Switching
PDF  7 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

RJK0328DPB-01 数据表(HTML) 3 Page - Renesas Technology Corp

  RJK0328DPB-01 Datasheet HTML 1Page - Renesas Technology Corp RJK0328DPB-01 Datasheet HTML 2Page - Renesas Technology Corp RJK0328DPB-01 Datasheet HTML 3Page - Renesas Technology Corp RJK0328DPB-01 Datasheet HTML 4Page - Renesas Technology Corp RJK0328DPB-01 Datasheet HTML 5Page - Renesas Technology Corp RJK0328DPB-01 Datasheet HTML 6Page - Renesas Technology Corp RJK0328DPB-01 Datasheet HTML 7Page - Renesas Technology Corp  
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RJK0328DPB-01
Preliminary
R07DS0264EJ0500 Rev.5.00
Page 3 of 6
Mar 01, 2011
Main Characteristics
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
Drain Current
ID
(A)
Static Drain to Source on State Resistance
vs. Drain Current
100
80
60
40
20
0
2
468
10
100
80
60
40
20
0
12
3
4
5
Tc = 75
°C
25
°C
–25
°C
80
60
40
20
0
50
100
150
200
VDS = 10 V
Pulse Test
VGS = 2.6 V
Pulse Test
1
0.3
0.1
30
300
1
10
100
1000
3
200
150
100
50
0
4
8
12
16
20
Pulse Test
ID = 20 A
10 A
10
3
VGS = 4.5 V
10 V
2.8 V
3.0 V
10 V
3.2 V
4.5 V
Pulse Test
0.1
1
10
100
10
100
1000
1
0.1
100
μs
PW = 10 ms
1 ms
10
μs
Operation in
this area is
limited by RDS(on)
Tc = 25
°C
1 shot Pulse
5 A



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