DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

NPN SILICON RF TRANSISTOR

2SC3355

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

Document No. PU10208EJ01V0DS (1st edition)

(Previous No. P10355EJ3V1DS00)

Date Published April 2003 CP(K)

Printed in Japan

The mark

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• shows major revised points.

©

©

©

DESCRIPTION

The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

It has lange dynamic range and good current characteristic.

FEATURES

• Low noise and high gain

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC3355

500 pcs (Non reel)

• 18 mm wide radial taping

2SC3355-T

2.5 kpcs/box (Box type)

• Supplying paper tape with in a box

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 500 pcs.

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

20

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

3.0

V

Collector Current

100

mA

Total Power Dissipation

600

mW

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C