2SC3355 datasheet(3/10 Pages) RENESAS

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DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

NPN SILICON RF TRANSISTOR

2SC2570A

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

Document No. PU10207EJ01V0DS (1st edition)

(Previous No. P10404EJ3V0DS00)

Date Published April 2003 CP(K)

Printed in Japan

The mark

•

• shows major revised points.

DESCRIPTION

The 2SC2570A is designed for use in Low Noise Amplifier of VHF and UHF satges.

FEATURES

• Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @ VCE = 10 V, IC = 5 mA, f = 1 GHz

• Wide dynamic range : NF = 1.9 dB TYP., Ga = 9 dB TYP. @ VCE = 10 V, IC = 15 mA, f = 1 GHz

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC2570A

500 pcs (Non reel)

• 18 mm wide radial taping

2SC2570A-T

2.5 kpcs/box (Box type)

• Supplying paper tape with in a box

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 500 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

Collector to Emitter Voltage

VCEO

Emitter to Base Voltage

VEBO

3.0

Collector Current

Total Power Dissipation

Ptot

Note

600

Junction Temperature

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Free air

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