AM2323P datasheet(1/5 Pages) ANALOGPOWER

部件名	AM2323P

功能描述	P-Channel 20-V (D-S) MOSFET

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制造商	ANALOGPOWER [Analog Power]

网页	http://www.analogpowerinc.com/index.html

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AM2323P

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM2323_C

1

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

rDS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

P-Channel 20-V (D-S) MOSFET

•

Low rDS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

SOT-23 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

D

S

G

Symbol Maximum Units

VDS

-20

VGS

±12

TA=25

o

C

-2.9

TA=70

o

C

-2.4

IDM

-10

IS

±1.6

A

TA=25

o

C

1.25

TA=70

o

C

0.8

TJ, Tstg

-55 to 150

o

C

Drain-Source Voltage

Continuous Drain Current

a

ID

A

Power Dissipation

a

PD

Operating Junction and Storage Temperature Range

W

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Paramete r

Pulsed Drain Current

b

V

Gate-Source Voltage

Symbol Maximum Units

t <= 5 sec

100

Steady-State

166

THERMAL RESISTANCE RATINGS

Parameter

oC/W

Maximum Junction-to-Ambient

a

RΤΗJA

VDS (V)

rDS(on) (OHM)

ID (A)

0.100 @ VGS = -4.5V

-2.9

0.160 @ VGS = -2.5V

-2.3

0.290 @ VGS = -1.8V

-1.7

-20

PRODUCT SUMMARY

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