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IL300 数据表(PDF) 2 Page - Siemens Semiconductor Group |
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IL300 数据表(HTML) 2 Page - Siemens Semiconductor Group |
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2 / 8 page ![]() 5–2 IL300 IL300 Terms KI—Servo Gain The ratio of the input photodiode current (IP1) to the LED cur- rent(IF). i.e., K1 = IP1/ IF. K2—Forward Gain The ratio of the output photodiode current ( IP2) to the LED current (IF), i.e., K2 = IP2/ IF. K3—Transfer Gain The Transfer Gain is the ratio of the Forward Gain to the Servo gain, i.e., K3 = K2/K1. ∆K3—Transfer Gain Linearity The percent deviation of the Transfer Gain, as a function of LED or temperature from a specific Transfer Gain at a fixed LED current and temperature. Photodiode A silicon diode operating as a current source. The output cur- rent is proportional to the incident optical flux supplied by the LED emitter. The diode is operated in the photovoltaic or pho- toconductive mode. In the photovoltaic mode the diode func- tions as a current source in parallel with a forward biased silicon diode. The magnitude of the output current and voltage is depen- dant upon the load resistor and the incident LED optical flux. When operated in the photoconductive mode the diode is connected to a bias supply which reverse biases the silicon diode. The magnitude of the output current is directly propor- tional to the LED incident optical flux. LED (Light Emitting Diode) An infrared emitter constructed of AlGaAs that emits at 890 nm operates efficiently with drive current from 500 µA to 40 mA. Best linearity can be obtained at drive currents between 5 mA to 20 mA. Its output flux typically changes by –0.5%/ °C over the above operational current range. Absolute Maximum Ratings Symbol Min. Max. Unit Emitter Power Dissipation (TA=25°C) PLED 160 mW Derate Linearly from 25 °C 2.13 mW/ °C Forward Current lf 60 mA Surge Current (Pulse width <10 µs) lpk 250 mA Reverse Voltage VR 5V Thermal Resistance Rth 470 °C/W Junction Temperature TJ 100 °C Detector Power Dissipation PDET 50 mA Derate linearly from 25 °C 0.65 mW/ °C Reverse Voltage VR 50 V Junction Temperature TJ 100 °C Thermal Resistance Rth 1500 °C/W Coupler Total Package Dissipation at 25 °C PT 210 mW Derate linearly from 25 °C 2.8 mW/ °C Storage Temperature TS –55 150 °C Operating Temperature TOP –55 100 °C Isolation Test Voltage 5300 VACRMS Isolation Resistance VIO=500 V, TA=25°C VIO=500 V, TA=100°C 10 12 10 11 Ω Ω |
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