1N50Z

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-726.b

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

SWITCHING PARAMETERS

Total Gate Charge

(Note 1, 2)

11

16

nC

Gate to Source Charge

1.6

nC

Gate to Drain Charge

5.5

nC

Turn-ON Delay Time

(Note 1, 2)

12

35

ns

Rise Time

13

35

ns

Turn-OFF Delay Time

42

90

ns

Fall-Time

15

40

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

1.3

A

Maximum Body-Diode Pulsed Current

5

A

Drain-Source Diode Forward Voltage

1.15

V

Body Diode Reverse Recovery Time

162

ns

Body Diode Reverse Recovery Charge

0.54

µC

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature