1N60G-AA3-R datasheet(3/6 Pages) UTC

3 / 6 page

1N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-052.J

ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250μA

600

Drain-Source Leakage Current

IDSS

VDS=600V, VGS=0V

μA

Forward

VGS=30V, VDS=0V

100

Gate-Source Leakage Current

Reverse

IGSS

VGS=-30V, VDS=0V

-100 nA

Breakdown Voltage Temperature

Coefficient

△

BVDSS/T

△ J ID=250μA

0.4

V/℃

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250μA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=0.6A

9.3 11.5

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

120 150

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VDS=25V, VGS=0V, f=1MHz

3.0

4.0

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

Turn-Off Fall Time

VDD=300V, ID=1.2A, RG=50Ω

(Note 2,3)

Total Gate Charge

5.0

6.0

Gate-Source Charge

QGS

1.0

Gate-Drain Charge

QGD

VDS=480V, VGS=10V, ID=1.2A

(Note 2,3)

2.6

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS=0V, IS =1.2A

1.4

Maximum Continuous Drain-Source Diode

Forward Current

1.2

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

4.8

Reverse Recovery Time

tRR

160

Reverse Recovery Charge

QRR

VGS=0V, IS=1.2A

dIF/dt=100A/μs (Note 1)

0.3

μC

Note:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%

3. Essentially Independent of Operating Temperature

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