1N60ZL-T92-R datasheet(3/6 Pages) UTC

部件名	1N60ZL-T92-R

功能描述	1.2A, 600V N-CHANNEL POWER MOSFET

PDF	6 Pages

Scroll/Zoom	100%

制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

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3 / 6 page

1N60Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-724.C

ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS=0V, IS =1.2A

1.4

Maximum Continuous Drain-Source Diode

Forward Current

1.2

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

4.8

Reverse Recovery Time

trr

VGS=0V, IS=1.2A

dIF/dt=100A/μs (Note 1)

160

Reverse Recovery Charge

QRR

0.3

μC

Note:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%

3. Essentially Independent of Operating Temperature

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